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IPS10N03LA
Infineon Technologies AG
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 25 V | 1 | 30 A | 10.4 mΩ | LOGIC LEVEL COMPATIBLE | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 52 W | 210 A | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | TO-251AA | IN-LINE, R-PSIP-T3 | 3 | compliant | EAR99 | ||||
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IPS10N03LAG
Infineon Technologies AG
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 25 V | 1 | 30 A | 10.4 mΩ | LOGIC LEVEL COMPATIBLE | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 52 W | 210 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | TO-251AA | IN-LINE, R-PSIP-T3 | 3 | compliant | EAR99 |