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1 - 10 of 216 results
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IRF243
Intersil Corporation
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Check for Price | No | Obsolete | NO | e0 | 150 °C | 2 | FLANGE MOUNT | TIN LEAD | INTERSIL CORP | not_compliant | EAR99 | 8541.29.00.95 | DRAIN | SINGLE WITH BUILT-IN DIODE | 150 V | 16 A | 220 mΩ | METAL-OXIDE SEMICONDUCTOR | TO-204AE | O-MBFM-P2 | 1 | ENHANCEMENT MODE | METAL | ROUND | N-CHANNEL | 125 W | 125 W | 64 A | Not Qualified | PIN/PEG | BOTTOM | SWITCHING | SILICON | 140 ns | 90 ns | |||||||||||||||||||||||||||||
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IRF-240.18UH+-10%ERE3
Vishay Intertechnologies
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Check for Price | Yes | Active | GENERAL PURPOSE INDUCTOR | 180 nH | 120 mΩ | 10 % | NO | 1.2 A | 280 MHz | Ferrite | 30 | RF INDUCTOR | 1 | NO | 105 °C | -20 °C | Epoxy Resin Coated | 2 | Axial | TR | TUBULAR PACKAGE | WIRE | 500 µm | 28 mm | 3 mm | 4 mm | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | 8504.50.80.00 | ||||||||||||||||||||||||||||||||||
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IRF24ER1R2K
Vishay Intertechnologies
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Check for Price | Yes | Active | GENERAL PURPOSE INDUCTOR | 1.2 µH | 180 mΩ | 10 % | NO | 7.96 MHz | 740 mA | 135 MHz | FERRITE | 40 | RF INDUCTOR | 1 | NO | Q MEASURED AT 7.96 MHZ | 105 °C | -20 °C | Epoxy Resin Coated | 2 | Axial | TR | TUBULAR PACKAGE | TIN COPPER OVER NICKEL | AXIAL | WIRE | 500 µm | 28 mm | 3 mm | 4 mm | VISHAY INTERTECHNOLOGY INC | compliant | AXIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT | |||||||||||||||||||||||||||||||
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IRF-24100UH+-10%ERE3
Vishay Intertechnologies
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Check for Price | Yes | Active | GENERAL PURPOSE INDUCTOR | 100 µH | 3.7 Ω | 10 % | NO | 165 mA | 5.5 MHz | Ferrite | 50 | RF INDUCTOR | 1 | NO | 105 °C | -20 °C | Epoxy Resin Coated | 2 | Axial | TR | TUBULAR PACKAGE | WIRE | 500 µm | 28 mm | 3 mm | 4 mm | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | 8504.50.80.00 | ||||||||||||||||||||||||||||||||||
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IRF245
Harris Semiconductor
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Check for Price | No | Obsolete | NO | e0 | 150 °C | 2 | FLANGE MOUNT | TIN LEAD | HARRIS SEMICONDUCTOR | unknown | EAR99 | DRAIN | SINGLE WITH BUILT-IN DIODE | 250 V | 13 A | 340 mΩ | METAL-OXIDE SEMICONDUCTOR | TO-204AA | O-MBFM-P2 | 1 | ENHANCEMENT MODE | METAL | ROUND | N-CHANNEL | 125 W | 52 A | Not Qualified | PIN/PEG | BOTTOM | SWITCHING | SILICON | 550 mJ | ||||||||||||||||||||||||||||||||
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IRF24ER2R7K
Vishay Intertechnologies
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Check for Price | Yes | Active | GENERAL PURPOSE INDUCTOR | 2.7 µH | 280 mΩ | 10 % | NO | 7.96 MHz | 595 mA | 80 MHz | FERRITE | 40 | RF INDUCTOR | 1 | NO | Q MEASURED AT 7.96 MHZ | 105 °C | -20 °C | Epoxy Resin Coated | 2 | Axial | TR | TUBULAR PACKAGE | TIN COPPER OVER NICKEL | AXIAL | WIRE | 500 µm | 28 mm | 3 mm | 4 mm | VISHAY INTERTECHNOLOGY INC | compliant | AXIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT | |||||||||||||||||||||||||||||||
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IRF24ER2R7K
Vishay Dale
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Check for Price | Yes | Yes | Active | GENERAL PURPOSE INDUCTOR | 2.7 µH | 280 mΩ | 10 % | NO | 7.96 MHz | 595 mA | 80 MHz | FERRITE | 40 | RF INDUCTOR | 1 | NO | Q MEASURED AT 7.96 MHZ | 105 °C | -20 °C | Epoxy Resin Coated | 2 | Axial | TR | TUBULAR PACKAGE | TIN COPPER OVER NICKEL | AXIAL | WIRE | 500 µm | 28 mm | 3 mm | 4 mm | VISHAY DALE | unknown | EAR99 | 8504.50.80.00 | |||||||||||||||||||||||||||||
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IRF240E
International Rectifier
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Check for Price | No | No | Obsolete | NO | e0 | CECC | 150 °C | 2 | FLANGE MOUNT | TIN LEAD | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8541.29.00.95 | DRAIN | SINGLE WITH BUILT-IN DIODE | 200 V | 18 A | 210 mΩ | METAL-OXIDE SEMICONDUCTOR | TO-204AE | O-MBFM-P2 | 1 | ENHANCEMENT MODE | METAL | ROUND | N-CHANNEL | 125 W | 72 A | Not Qualified | PIN/PEG | BOTTOM | SWITCHING | SILICON | 125 ns | 172 ns | FLANGE MOUNT, O-MBFM-P2 | 450 mJ | ||||||||||||||||||||||||||
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IRF241
National Semiconductor Corporation
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Check for Price | No | Obsolete | NO | e0 | 150 °C | Tin/Lead (Sn/Pb) | NATIONAL SEMICONDUCTOR CORP | compliant | EAR99 | SINGLE | 18 A | METAL-OXIDE SEMICONDUCTOR | 1 | N-CHANNEL | 125 W | |||||||||||||||||||||||||||||||||||||||||||||||||
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IRF240EA
International Rectifier
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Check for Price | No | No | Obsolete | NO | e0 | CECC | 150 °C | 2 | FLANGE MOUNT | TIN LEAD | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8541.29.00.95 | DRAIN | SINGLE WITH BUILT-IN DIODE | 200 V | 18 A | 210 mΩ | METAL-OXIDE SEMICONDUCTOR | TO-204AE | O-MBFM-P2 | 1 | ENHANCEMENT MODE | METAL | ROUND | N-CHANNEL | 125 W | 72 A | Not Qualified | PIN/PEG | BOTTOM | SWITCHING | SILICON | 125 ns | 172 ns | FLANGE MOUNT, O-MBFM-P2 | 450 mJ |