Filter Your Search
1 - 10 of 110 results
|
IRF150DM115XTMA1
Infineon Technologies AG
|
$2.1712 | Active | 1 | NOT SPECIFIED | NOT SPECIFIED | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||||||||||||||||||||||||||
|
IRF150P220AKMA1
Infineon Technologies AG
|
$7.9799 | Yes | Active | e3 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | ||||||||||||||||||||||||||||||||||
|
IRF150EAPBF
Infineon Technologies AG
|
Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 38 A | 65 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 152 A | SWITCHING | SILICON | TO-204AE | O-MBFM-P2 | Not Qualified | CECC | NOT SPECIFIED | NOT SPECIFIED | DRAIN | METAL | ROUND | FLANGE MOUNT | PIN/PEG | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | FLANGE MOUNT, O-MBFM-P2 | ||||||||||||
|
IRF1503STRLPBF
International Rectifier
|
Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 75 A | 3.3 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 510 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 960 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | LEAD FREE, PLASTIC, D2PAK-3 | D2PAK | 3 | ||||||
|
IRF150R1
TT Electronics Resistors
|
Check for Price | Yes | Not Recommended | N-CHANNEL | NO | SINGLE | 2 | 100 V | 1 | 38 A | 55 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 152 A | SWITCHING | SILICON | TO-3 | O-MBFM-P2 | e1 | Not Qualified | DRAIN | METAL | ROUND | FLANGE MOUNT | TIN SILVER COPPER | PIN/PEG | BOTTOM | TT ELECTRONICS PLC | compliant | EAR99 | FLANGE MOUNT, O-MBFM-P2 | |||||||||||||
|
IRF150SMDR4
TT Electronics Power and Hybrid / Semelab Limited
|
Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 27 A | 81 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 108 A | SILICON | R-CBCC-N3 | e4 | Not Qualified | 150 °C | DRAIN | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | GOLD | NO LEAD | BOTTOM | SEMELAB LTD | compliant | EAR99 | CHIP CARRIER, R-CBCC-N3 | 3 | ||||||||||||
|
IRF150PBF
Infineon Technologies AG
|
Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 38 A | 65 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 152 A | SWITCHING | SILICON | TO-204AE | O-MBFM-P2 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | METAL | ROUND | FLANGE MOUNT | PIN/PEG | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | FLANGE MOUNT, O-MBFM-P2 | |||||||||||||
|
IRF1503PBF
Infineon Technologies AG
|
Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 75 A | 3.3 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 980 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 330 W | 960 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | FLANGE MOUNT, R-PSFM-T3 | |||||||||
|
IRF150SMD-JQR-B
TT Electronics Resistors
|
Check for Price | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 27 A | 81 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 108 A | SILICON | R-CBCC-N3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | TT ELECTRONICS PLC | compliant | EAR99 | CHIP CARRIER, R-CBCC-N3 | ||||||||||||||
|
IRF150P221XKMA1
Infineon Technologies AG
|
Check for Price | Yes | Obsolete | 1 | NOT SPECIFIED | NOT SPECIFIED | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | , |