Parametric results for: irf244 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

550.0 mJ 5

9 hits Apply

DRAIN 6

9 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 5

9 hits Apply

DS Breakdown Voltage-Min (1)

250 V 6

9 hits Apply

Drain Current-Max (ID) (1)

14 A 8

9 hits Apply

Drain-source On Resistance-Max (1)

280 mΩ 6

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

TO-204AA 6

9 hits Apply

O-MBFM-P2 6

9 hits Apply

e0 6

9 hits Apply

Manufacturer (7)

General Electric Solid State 1 Harris Semiconductor 2 Infineon Technologies AG 1 International Rectifier 1 Intersil Corporation 2 Rochester Electronics LLC 1 Thomson Consumer Electronics 1

9 hits Apply

NOT SPECIFIED 1

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

2 6

9 hits Apply

ENHANCEMENT MODE 8

9 hits Apply

150.0 °C 7

9 hits Apply

METAL 6

9 hits Apply

ROUND 6

9 hits Apply

FLANGE MOUNT 6

9 hits Apply

Active 1 Obsolete 6 Transferred 2

9 hits Apply

No 1

9 hits Apply

NOT SPECIFIED 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

125 W 2

9 hits Apply

125 W 5

9 hits Apply

Surface Mount (1)

NO 8

9 hits Apply