Parametric results for: irf513 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LEADFORM OPTIONS ARE AVAILABLE 2

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19.0 mJ 2

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DRAIN 50

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Configuration (3)

SINGLE 55 Single 1 SINGLE WITH BUILT-IN DIODE 6

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DS Breakdown Voltage-Min (2)

60 V 2 80 V 49

Min (V) - Max (V)

63 hits Apply

Drain Current-Max (Abs) (ID) (1)

4.9 A 1

63 hits Apply

Drain Current-Max (ID) (2)

3.5 A 2 4.9 A 59

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

740 mΩ 49 800 mΩ 2

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 62

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25 pF 2

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TO-220AB 7

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R-PSFM-T3 51

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e0 28 e3 33

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Manufacturer (17)

Advanced Microelectronic Products Inc 1 Fairchild Semiconductor Corporation 1 FCI Semiconductor 1 Freescale Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 2 Infineon Technologies AG 22 International Rectifier 23 Intersil Corporation 2 Microchip Technology Inc 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 National Semiconductor Corporation 1 Samsung Semiconductor 1 Supertex Inc 1 Texas Instruments 1 Thomson Consumer Electronics 2

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Number of Elements (1)

1 61

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Number of Terminals (1)

3 51

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ENHANCEMENT MODE 62

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150.0 °C 15 175.0 °C 3

Min (°C) - Max (°C)

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PLASTIC/EPOXY 51

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RECTANGULAR 51

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FLANGE MOUNT 51

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Active 1 Contact Manufacturer 1 Obsolete 47 Transferred 14

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No 11 Yes 11

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Polarity/Channel Type (1)

N-CHANNEL 62

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20 W 2 43 W 4

Min (W) - Max (W)

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43 W 18

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Surface Mount (1)

NO 62

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