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IRF5210PBF
International Rectifier
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$0.7350 | Yes | Yes | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 40 A | 60 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 780 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 140 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-220AB | LEAD FREE PACKAGE-3 | 3 | unknown | EAR99 | 8541.29.00.95 | |||||||||
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IRF5210SPBF
International Rectifier
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$0.8000 | Yes | Yes | Transferred | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 38 A | 60 mΩ | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 140 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | D2PAK | LEAD FREE, D2PAK-3 | 3 | not_compliant | EAR99 | |||||||
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IRF5210LPBF
International Rectifier
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$0.9270 | Yes | Yes | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 38 A | 60 mΩ | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 140 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-262AA | LEAD FREE, TO-262, 3 PIN | 3 | not_compliant | EAR99 | |||||||
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IRF5210PBF
Infineon Technologies AG
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$1.3914 | Yes | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 40 A | 60 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 780 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 140 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | Infineon | |||||||||
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IRF5210STRRPBF
Infineon Technologies AG
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$1.4218 | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 38 A | 60 mΩ | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 140 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | 1996-08-14 | ||||||||
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AUIRF5210S
Infineon Technologies AG
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$1.5115 | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 38 A | 60 mΩ | AVALANCHE RATED | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 140 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | AEC-Q101 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||
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IRF5210SPBF
Infineon Technologies AG
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$1.6323 | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 38 A | 60 mΩ | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 140 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | ||||||||
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IRF5210LPBF
Infineon Technologies AG
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$1.8791 | Yes | Obsolete | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 38 A | 60 mΩ | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 140 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | IN-LINE, R-PSIP-T3 | not_compliant | EAR99 | Infineon | |||||||||
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IRF5210STRLPBF
Infineon Technologies AG
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$2.1696 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 38 A | 60 mΩ | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 140 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | ||||||||
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AUIRF5210STRL
Infineon Technologies AG
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$3.3901 | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 38 A | 60 mΩ | AVALANCHE RATED | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 140 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | AEC-Q101 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | Infineon |