Parametric results for: irf5210 under Power Field-Effect Transistors

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Manufacturer Part Number: irf5210
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IRF5210PBF
International Rectifier
$0.7350 Yes Yes Transferred P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 40 A 60 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 780 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 140 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN OVER NICKEL THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP TO-220AB LEAD FREE PACKAGE-3 3 unknown EAR99 8541.29.00.95
IRF5210SPBF
International Rectifier
$0.8000 Yes Yes Transferred P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 38 A 60 mΩ HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 140 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE INTERNATIONAL RECTIFIER CORP D2PAK LEAD FREE, D2PAK-3 3 not_compliant EAR99
IRF5210LPBF
International Rectifier
$0.9270 Yes Yes Transferred P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 38 A 60 mΩ HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 140 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Matte Tin (Sn) - with Nickel (Ni) barrier THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP TO-262AA LEAD FREE, TO-262, 3 PIN 3 not_compliant EAR99
IRF5210PBF
Infineon Technologies AG
$1.3914 Yes Active P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 40 A 60 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 780 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 140 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - with Nickel (Ni) barrier THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG FLANGE MOUNT, R-PSFM-T3 compliant EAR99 Infineon
IRF5210STRRPBF
Infineon Technologies AG
$1.4218 Yes Obsolete P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 38 A 60 mΩ HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 140 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE INFINEON TECHNOLOGIES AG SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 Infineon 1996-08-14
AUIRF5210S
Infineon Technologies AG
$1.5115 Yes Obsolete P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 38 A 60 mΩ AVALANCHE RATED 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 140 A SWITCHING SILICON TO-263AB R-PSSO-G2 AEC-Q101 1 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE INFINEON TECHNOLOGIES AG compliant EAR99 Infineon
IRF5210SPBF
Infineon Technologies AG
$1.6323 Yes Obsolete P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 38 A 60 mΩ HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 140 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN OVER NICKEL GULL WING SINGLE INFINEON TECHNOLOGIES AG SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 Infineon
IRF5210LPBF
Infineon Technologies AG
$1.8791 Yes Obsolete P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 38 A 60 mΩ HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 140 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Matte Tin (Sn) - with Nickel (Ni) barrier THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG IN-LINE, R-PSIP-T3 not_compliant EAR99 Infineon
IRF5210STRLPBF
Infineon Technologies AG
$2.1696 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 38 A 60 mΩ HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 140 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE INFINEON TECHNOLOGIES AG SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 Infineon
AUIRF5210STRL
Infineon Technologies AG
$3.3901 Yes Obsolete P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 38 A 60 mΩ AVALANCHE RATED 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 140 A SWITCHING SILICON TO-263AB R-PSSO-G2 AEC-Q101 1 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE INFINEON TECHNOLOGIES AG SMALL OUTLINE, R-PSSO-G2 compliant EAR99 Infineon