Parametric results for: irf5210strr under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 HIGH RELIABILITY, AVALANCHE RATED, ULTRA LOW RESISTANCE 1 HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 3

6 hits Apply

120.0 mJ 5 780.0 mJ 1

Min (mJ) - Max (mJ)

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 6

6 hits Apply

Drain Current-Max (ID) (2)

38 A 5 40 A 1

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-263AB 5

6 hits Apply

R-PSSO-G2 6

6 hits Apply

e0 1 e3 2

6 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 4

6 hits Apply

1 3

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4 175.0 °C 2

Min (°C) - Max (°C)

6 hits Apply

-55.0 °C 1

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 1 Obsolete 2 Transferred 3

6 hits Apply

Yes 1

6 hits Apply

225 1 260 2 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 6

6 hits Apply

170 W 4 200 W 1

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply