Findchips: Parametric Search Results for irf5nj5305


Select Parts		Part Number

		IRF5NJ5305 Infineon Technologies AG
		IRF5NJ5305PBF International Rectifier
		IRF5NJ5305PBF Infineon Technologies AG
		IRF5NJ5305SCX Infineon Technologies AG
		IRF5NJ5305 International Rectifier
		IRF5NJ5305SCX International Rectifier
		IRF5NJ5305SCV Infineon Technologies AG

				Most Relevant								Technical										Compliance			Operating Conditions				Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Additional Feature	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	Turn-off Time-Max (toff)	Turn-on Time-Max (ton)	JESD-30 Code	JESD-609 Code	Qualification Status	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	Pin Count

Check for Price

Active

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

AVALANCHE RATED

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

75 W

88 A

SWITCHING

SILICON

R-CBCC-N3

Not Qualified

150 °C

NOT SPECIFIED

DRAIN

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

Tin/Lead (Sn/Pb)

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CBCC-N3

not_compliant

EAR99

Check for Price

Yes

Transferred

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

AVALANCHE RATED

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

88 A

SWITCHING

SILICON

R-CBCC-N3

Not Qualified

150 °C

260

DRAIN

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

NO LEAD

BOTTOM

INTERNATIONAL RECTIFIER CORP

CHIP CARRIER, R-CBCC-N3

compliant

EAR99

Check for Price

Yes

Active

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

AVALANCHE RATED

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

88 A

SWITCHING

SILICON

R-CBCC-N3

150 °C

NOT SPECIFIED

DRAIN

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CBCC-N3

compliant

EAR99

Check for Price

Active

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

75 W

88 A

SWITCHING

SILICON

130 ns

151 ns

R-XBCC-N3

150 °C

-55 °C

NOT SPECIFIED

DRAIN

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

Tin/Lead (Sn/Pb)

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-XBCC-N3

not_compliant

EAR99

Check for Price

Transferred

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

AVALANCHE RATED

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

88 A

SWITCHING

SILICON

R-CBCC-N3

Not Qualified

150 °C

NOT SPECIFIED

DRAIN

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

NO LEAD

BOTTOM

INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC

CHIP CARRIER, R-CBCC-N3

unknown

EAR99

Check for Price

Transferred

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

75 W

88 A

SWITCHING

SILICON

130 ns

151 ns

R-XBCC-N3

150 °C

-55 °C

DRAIN

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

Tin/Lead (Sn/Pb)

NO LEAD

BOTTOM

INTERNATIONAL RECTIFIER CORP

CHIP CARRIER, R-XBCC-N3

unknown

EAR99

Check for Price

Active

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

AVALANCHE RATED

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

88 A

SWITCHING

SILICON

R-CBCC-N3

NOT SPECIFIED

DRAIN

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

HERMETIC SEALED, SMD0.5, 3 PIN

compliant

EAR99

Compare

IRF5NJ5305

Infineon Technologies AG

Check for Price

Active

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

AVALANCHE RATED

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

75 W

88 A

SWITCHING

SILICON

R-CBCC-N3

Not Qualified

150 °C

NOT SPECIFIED

DRAIN

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

Tin/Lead (Sn/Pb)

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CBCC-N3

not_compliant

EAR99

IRF5NJ5305PBF

International Rectifier

Check for Price

Yes

Transferred

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

AVALANCHE RATED

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

88 A

SWITCHING

SILICON

R-CBCC-N3

Not Qualified

150 °C

260

DRAIN

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

NO LEAD

BOTTOM

INTERNATIONAL RECTIFIER CORP

CHIP CARRIER, R-CBCC-N3

compliant

EAR99

IRF5NJ5305PBF

Infineon Technologies AG

Check for Price

Yes

Active

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

AVALANCHE RATED

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

88 A

SWITCHING

SILICON

R-CBCC-N3

150 °C

NOT SPECIFIED

DRAIN

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CBCC-N3

compliant

EAR99

IRF5NJ5305SCX

Infineon Technologies AG

Check for Price

Active

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

75 W

88 A

SWITCHING

SILICON

130 ns

151 ns

R-XBCC-N3

150 °C

-55 °C

NOT SPECIFIED

DRAIN

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

Tin/Lead (Sn/Pb)

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-XBCC-N3

not_compliant

EAR99

IRF5NJ5305

International Rectifier

Check for Price

Transferred

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

AVALANCHE RATED

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

88 A

SWITCHING

SILICON

R-CBCC-N3

Not Qualified

150 °C

NOT SPECIFIED

DRAIN

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

NO LEAD

BOTTOM

INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC

CHIP CARRIER, R-CBCC-N3

unknown

EAR99

IRF5NJ5305SCX

International Rectifier

Check for Price

Transferred

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

75 W

88 A

SWITCHING

SILICON

130 ns

151 ns

R-XBCC-N3

150 °C

-55 °C

DRAIN

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

Tin/Lead (Sn/Pb)

NO LEAD

BOTTOM

INTERNATIONAL RECTIFIER CORP

CHIP CARRIER, R-XBCC-N3

unknown

EAR99

IRF5NJ5305SCV

Infineon Technologies AG

Check for Price

Active

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

22 A

65 mΩ

AVALANCHE RATED

160 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

88 A

SWITCHING

SILICON

R-CBCC-N3

NOT SPECIFIED

DRAIN

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

HERMETIC SEALED, SMD0.5, 3 PIN

compliant

EAR99

Parametric results for: irf5nj5305 under Power Field-Effect Transistors