Parametric results for: irf610a under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

44.0 mJ 3

11 hits Apply

DRAIN 8

11 hits Apply

Configuration (2)

SINGLE 8 SINGLE WITH BUILT-IN DIODE 3

11 hits Apply

DS Breakdown Voltage-Min (1)

200 V 11

11 hits Apply

Drain Current-Max (ID) (2)

2.5 A 8 3.3 A 3

Min (A) - Max (A)

11 hits Apply

Drain-source On Resistance-Max (1)

1.5 Ω 11

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-220AB 10

11 hits Apply

R-PSFM-T3 11

11 hits Apply

e0 1

11 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 2 Motorola Mobility LLC 4 Motorola Semiconductor Products 4 Samsung Semiconductor 1

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

3 11

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 3

11 hits Apply

PLASTIC/EPOXY 11

11 hits Apply

RECTANGULAR 11

11 hits Apply

FLANGE MOUNT 11

11 hits Apply

Obsolete 10 Transferred 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

20 W 8

11 hits Apply

38 W 2

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply