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IRF644A
Samsung Semiconductor
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 14 A | 280 mΩ | 490 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 139 W | 56 A | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | TO-220AB | FLANGE MOUNT, R-PSFM-T3 | 3 | unknown | EAR99 | ||||||
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IRF644A
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 14 A | 280 mΩ | 490 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 139 W | 56 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-220AB | FLANGE MOUNT, R-PSFM-T3 | 3 | unknown | EAR99 | ||
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IRF644AJ69Z
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 14 A | 280 mΩ | 490 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 56 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-220AB | FLANGE MOUNT, R-PSFM-T3 | 3 | unknown | EAR99 |