Parametric results for: irf645 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

550.0 mJ 3

50 hits Apply

DRAIN 47

50 hits Apply

Configuration (2)

SINGLE 47 SINGLE WITH BUILT-IN DIODE 3

50 hits Apply

DS Breakdown Voltage-Min (1)

250 V 48

50 hits Apply

Drain Current-Max (ID) (1)

13 A 50

50 hits Apply

Drain-source On Resistance-Max (1)

340 mΩ 48

50 hits Apply

METAL-OXIDE SEMICONDUCTOR 50

50 hits Apply

TO-220AB 4

50 hits Apply

R-PSFM-T3 48

50 hits Apply

e0 15 e3 33

50 hits Apply

Manufacturer (7)

Harris Semiconductor 1 Infineon Technologies AG 22 International Rectifier 23 Intersil Corporation 1 Rochester Electronics LLC 1 Samsung Semiconductor 1 Thomson Consumer Electronics 1

50 hits Apply

Number of Elements (1)

1 50

50 hits Apply

Number of Terminals (1)

3 48

50 hits Apply

ENHANCEMENT MODE 50

50 hits Apply

150.0 °C 5

50 hits Apply

PLASTIC/EPOXY 48

50 hits Apply

RECTANGULAR 48

50 hits Apply

FLANGE MOUNT 48

50 hits Apply

Active 1 Obsolete 38 Transferred 11

50 hits Apply

No 11 Yes 11

50 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 50

50 hits Apply

125 W 2

50 hits Apply

125 W 5

50 hits Apply

Surface Mount (1)

NO 50

50 hits Apply