Parametric results for: irf6644 under Power Field-Effect Transistors

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Manufacturer Part Number: irf6644
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IRF6644TRPBF
Infineon Technologies AG
$1.9498 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 10 A 13 mΩ LOW CONDUCTION LOSS 86 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.8 W 89 W 228 A SILICON R-XBCC-N3 e1 Not Qualified 1 150 °C -40 °C 260 30 DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER Tin/Silver/Copper (Sn/Ag/Cu) NO LEAD BOTTOM INFINEON TECHNOLOGIES AG compliant EAR99 8541.29.00.95 Infineon
IRF6644TR1
International Rectifier
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 10.3 A 13 mΩ 220 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 89 W 82 A SWITCHING SILICON R-XBCC-N3 e4 Not Qualified 3 150 °C 260 30 DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER SILVER NICKEL NO LEAD BOTTOM INTERNATIONAL RECTIFIER CORP compliant EAR99 8541.29.00.95 ISOMETRIC-3 3
IRF6644PBF
International Rectifier
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 10.3 A 13 mΩ 220 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 89 W 82 A SWITCHING SILICON R-XBCC-N3 e4 Not Qualified 3 150 °C 260 30 DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER Silver/Nickel (Ag/Ni) NO LEAD BOTTOM INTERNATIONAL RECTIFIER CORP compliant EAR99 CHIP CARRIER, R-XBCC-N3 3
IRF6644TR1PBF
International Rectifier
Check for Price Yes Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 10.3 A 13 mΩ 220 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 89 W 82 A SWITCHING SILICON R-XBCC-N3 e4 Not Qualified 1 150 °C 260 30 DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER SILVER NICKEL NO LEAD BOTTOM INTERNATIONAL RECTIFIER CORP compliant EAR99 8541.29.00.95 ROHS COMPLIANT, ISOMETRIC-3 3
IRF6644
International Rectifier
Check for Price Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 10.3 A 13 mΩ 220 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 89 W 82 A SWITCHING SILICON R-XBCC-N3 e4 Not Qualified 3 150 °C 260 30 DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER SILVER NICKEL NO LEAD BOTTOM INTERNATIONAL RECTIFIER CORP unknown EAR99 8541.29.00.95 ISOMETRIC-3 3
IRF6644
Infineon Technologies AG
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 10.3 A 13 mΩ 220 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 82 A SWITCHING SILICON R-XBCC-N3 e4 Not Qualified 3 150 °C 260 30 DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER Silver/Nickel (Ag/Ni) NO LEAD BOTTOM INFINEON TECHNOLOGIES AG compliant EAR99 Infineon CHIP CARRIER, R-XBCC-N3
IRF6644TR1PBF
Infineon Technologies AG
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 10 A 13 mΩ LOW CONDUCTION LOSS 86 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.8 W 89 W 228 A SILICON R-XBCC-N3 150 °C -40 °C DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM INFINEON TECHNOLOGIES AG compliant EAR99 8541.29.00.95 Infineon
IRF6644TRPBF
International Rectifier
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 10.3 A 13 mΩ 220 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 89 W 82 A SWITCHING SILICON R-XBCC-N3 e1 Not Qualified 1 150 °C 260 30 DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER TIN SILVER COPPER NO LEAD BOTTOM INTERNATIONAL RECTIFIER CORP compliant EAR99 8541.29.00.95 ROHS COMPLIANT, ISOMETRIC-3 3
IRF6644PBF
Infineon Technologies AG
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 57 A 13 mΩ TR, 7 INCH:1000 86 mJ 60 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 89 W 228 A SWITCHING SILICON R-XBCC-N3 e4 3 150 °C -40 °C 260 30 DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER SILVER NICKEL NO LEAD BOTTOM INFINEON TECHNOLOGIES AG compliant EAR99