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IRF6644TRPBF
Infineon Technologies AG
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$1.9498 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 10 A | 13 mΩ | LOW CONDUCTION LOSS | 86 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.8 W | 89 W | 228 A | SILICON | R-XBCC-N3 | e1 | Not Qualified | 1 | 150 °C | -40 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | Tin/Silver/Copper (Sn/Ag/Cu) | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | 8541.29.00.95 | Infineon | |||||||
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IRF6644TR1
International Rectifier
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 10.3 A | 13 mΩ | 220 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 89 W | 82 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | SILVER NICKEL | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8541.29.00.95 | ISOMETRIC-3 | 3 | ||||||||
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IRF6644PBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 10.3 A | 13 mΩ | 220 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 89 W | 82 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | Silver/Nickel (Ag/Ni) | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | CHIP CARRIER, R-XBCC-N3 | 3 | ||||||||
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IRF6644TR1PBF
International Rectifier
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 10.3 A | 13 mΩ | 220 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 89 W | 82 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | SILVER NICKEL | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8541.29.00.95 | ROHS COMPLIANT, ISOMETRIC-3 | 3 | |||||||
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IRF6644
International Rectifier
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 10.3 A | 13 mΩ | 220 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 89 W | 82 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | SILVER NICKEL | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | unknown | EAR99 | 8541.29.00.95 | ISOMETRIC-3 | 3 | ||||||||
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IRF6644
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 10.3 A | 13 mΩ | 220 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 82 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | Silver/Nickel (Ag/Ni) | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | CHIP CARRIER, R-XBCC-N3 | ||||||||||
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IRF6644TR1PBF
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 10 A | 13 mΩ | LOW CONDUCTION LOSS | 86 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.8 W | 89 W | 228 A | SILICON | R-XBCC-N3 | 150 °C | -40 °C | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | 8541.29.00.95 | Infineon | |||||||||||||
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IRF6644TRPBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 10.3 A | 13 mΩ | 220 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 89 W | 82 A | SWITCHING | SILICON | R-XBCC-N3 | e1 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | TIN SILVER COPPER | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8541.29.00.95 | ROHS COMPLIANT, ISOMETRIC-3 | 3 | |||||||
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IRF6644PBF
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 57 A | 13 mΩ | TR, 7 INCH:1000 | 86 mJ | 60 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 89 W | 228 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | 3 | 150 °C | -40 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | SILVER NICKEL | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 |