Parametric results for: irf7413 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 5 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 1 HIGH RELIABILITY 4 HIGH RELIABILITY, ULTRA LOW RESISTANCE 2 LOGIC LEVEL COMPATIBLE 2 ULTRA LOW RESISTANCE 3

32 hits Apply

32.0 mJ 9 260.0 mJ 19

Min (mJ) - Max (mJ)

32 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 28

32 hits Apply

DS Breakdown Voltage-Min (1)

30 V 28

32 hits Apply

Drain Current-Max (ID) (2)

12 A 4 13 A 28

Min (A) - Max (A)

32 hits Apply

Drain-source On Resistance-Max (3)

10 mΩ 9 11 mΩ 15 13.5 mΩ 4

Min (Ω) - Max (Ω)

32 hits Apply

METAL-OXIDE SEMICONDUCTOR 32

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MS-012AA 26

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R-PDSO-G8 28

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e0 6 e3 15

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Manufacturer (2)

Infineon Technologies AG 12 International Rectifier 20

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1 22

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Number of Elements (1)

1 32

32 hits Apply

Number of Terminals (1)

8 28

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ENHANCEMENT MODE 29

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150.0 °C 26

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-55.0 °C 3

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PLASTIC/EPOXY 28

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RECTANGULAR 28

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SMALL OUTLINE 28

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Active 1 Not Recommended 2 Obsolete 18 Transferred 11

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Yes 9

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245 1 260 15 NOT SPECIFIED 4

32 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 32

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2.5 W 24

32 hits Apply

Surface Mount (1)

YES 32

32 hits Apply