Parametric results for: irf7526d1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

6 hits Apply

Drain Current-Max (ID) (1)

2 A 5

6 hits Apply

Drain-source On Resistance-Max (1)

200 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

R-PDSO-G8 4

6 hits Apply

e0 2 e3 2

6 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 4

6 hits Apply

1 2 2 1

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

8 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Obsolete 6

6 hits Apply

Yes 1

6 hits Apply

260 2 NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

6 hits Apply

420 mW 1 1.25 W 3

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

YES 5

6 hits Apply