Parametric results for: irf9520ns under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY 6

6 hits Apply

140.0 mJ 6

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 6

6 hits Apply

Drain Current-Max (ID) (1)

6.8 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

480 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PSSO-G2 6

6 hits Apply

e0 2 e3 4

6 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 4

6 hits Apply

1 6

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 6

6 hits Apply

-55.0 °C 2

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

Yes 3

6 hits Apply

225 2 260 4

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 6

6 hits Apply

48 W 5

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply