Parametric results for: irf995 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY 17 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 2 HIGH RELIABILITY 13

32 hits Apply

44.0 mJ 23 57.0 mJ 9

Min (mJ) - Max (mJ)

32 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 32

32 hits Apply

DS Breakdown Voltage-Min (1)

30 V 32

32 hits Apply

Drain Current-Max (ID) (3)

2.3 A 9 2.8 A 4 3.5 A 18

Min (A) - Max (A)

32 hits Apply

Drain-source On Resistance-Max (2)

100 mΩ 23 250 mΩ 9

Min (Ω) - Max (Ω)

32 hits Apply

METAL-OXIDE SEMICONDUCTOR 32

32 hits Apply

MS-012AA 22

32 hits Apply

R-PDSO-G8 32

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e0 9 e3 11

32 hits Apply

Manufacturer (2)

Infineon Technologies AG 15 International Rectifier 17

32 hits Apply

1 22 2 3

32 hits Apply

Number of Elements (1)

2 32

32 hits Apply

Number of Terminals (1)

8 32

32 hits Apply

ENHANCEMENT MODE 32

32 hits Apply

150.0 °C 20

32 hits Apply

-55.0 °C 3

32 hits Apply

PLASTIC/EPOXY 32

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RECTANGULAR 32

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SMALL OUTLINE 32

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Active 4 End Of Life 1 Obsolete 14 Transferred 13

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Yes 8

32 hits Apply

260 8 NOT SPECIFIED 8

32 hits Apply

Polarity/Channel Type (3)

N-CHANNEL 8 N-CHANNEL AND P-CHANNEL 15 P-CHANNEL 9

32 hits Apply

2 W 17

32 hits Apply

Surface Mount (1)

YES 32

32 hits Apply