Parametric results for: irf9z34s under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 5 HIGH RELIABILITY 2

16 hits Apply

370.0 mJ 16

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DRAIN 11

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Configuration (2)

SINGLE 6 SINGLE WITH BUILT-IN DIODE 10

16 hits Apply

DS Breakdown Voltage-Min (1)

60 V 16

16 hits Apply

Drain Current-Max (ID) (1)

18 A 16

16 hits Apply

Drain-source On Resistance-Max (1)

140 mΩ 16

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METAL-OXIDE SEMICONDUCTOR 16

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TO-263AB 16

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R-PSSO-G2 16

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e0 7 e3 4

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Manufacturer (3)

International Rectifier 6 Vishay Intertechnologies 5 Vishay Siliconix 5

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1 8

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Number of Elements (1)

1 16

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Number of Terminals (1)

2 16

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ENHANCEMENT MODE 16

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175.0 °C 14

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PLASTIC/EPOXY 16

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RECTANGULAR 16

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SMALL OUTLINE 16

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Active 3 Obsolete 4 Transferred 9

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No 3 Yes 3

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225 3 260 8

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Polarity/Channel Type (1)

P-CHANNEL 16

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88 W 6

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88 W 11

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Surface Mount (1)

YES 16

16 hits Apply