Parametric results for: irfb23n under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

250.0 mJ 4 260.0 mJ 4

Min (mJ) - Max (mJ)

9 hits Apply

DRAIN 8

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

9 hits Apply

DS Breakdown Voltage-Min (2)

150 V 4 200 V 4

Min (V) - Max (V)

9 hits Apply

Drain Current-Max (ID) (2)

23 A 4 24 A 4

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (2)

90 mΩ 4 100 mΩ 4

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

65 pF 1

9 hits Apply

TO-220AB 8

9 hits Apply

R-PSFM-T3 8

9 hits Apply

e0 4 e3 2

9 hits Apply

Manufacturer (2)

Infineon Technologies AG 5 International Rectifier 4

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

3 8

9 hits Apply

ENHANCEMENT MODE 8

9 hits Apply

175.0 °C 7

9 hits Apply

-55.0 °C 1

9 hits Apply

PLASTIC/EPOXY 8

9 hits Apply

RECTANGULAR 8

9 hits Apply

FLANGE MOUNT 8

9 hits Apply

Obsolete 5 Transferred 4

9 hits Apply

Yes 2

9 hits Apply

NOT SPECIFIED 4

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

136 W 3 170 W 3

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

NO 8

9 hits Apply