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IRFB38N20DPBF
Infineon Technologies AG
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$1.2434 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 43 A | 54 mΩ | 460 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 320 W | 180 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | LEAD FREE, PLASTIC PACKAGE-3 | compliant | EAR99 | Infineon | |||||||
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IRFB38N20DPBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 43 A | 54 mΩ | 460 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 320 W | 180 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | LEAD FREE, PLASTIC PACKAGE-3 | compliant | EAR99 | TO-220AB | 3 | |||||
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IRFB38N20D
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 44 A | 54 mΩ | 460 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 180 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | TO-220AB, 3 PIN | compliant | EAR99 | ||||||||
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IRFB38N20D
International Rectifier
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 44 A | 54 mΩ | 460 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 320 W | 180 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-220AB, 3 PIN | compliant | EAR99 | TO-220AB | 3 |