Parametric results for: irfb4610 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, ULTRA-LOW RESISTANCE 2

14 hits Apply

370.0 mJ 14

14 hits Apply

DRAIN 14

14 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 14

14 hits Apply

DS Breakdown Voltage-Min (1)

100 V 14

14 hits Apply

Drain Current-Max (ID) (1)

73 A 14

14 hits Apply

Drain-source On Resistance-Max (1)

14 mΩ 14

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 14

14 hits Apply

TO-220AB 14

14 hits Apply

R-PSFM-T3 14

14 hits Apply

e0 3 e3 6

14 hits Apply

Manufacturer (2)

Infineon Technologies AG 7 International Rectifier 7

14 hits Apply

Number of Elements (1)

1 14

14 hits Apply

Number of Terminals (1)

3 14

14 hits Apply

ENHANCEMENT MODE 14

14 hits Apply

150.0 °C 1 175.0 °C 10

Min (°C) - Max (°C)

14 hits Apply

-55.0 °C 1

14 hits Apply

PLASTIC/EPOXY 14

14 hits Apply

RECTANGULAR 14

14 hits Apply

FLANGE MOUNT 14

14 hits Apply

Active 2 End Of Life 2 Not Recommended 2 Obsolete 3 Transferred 5

14 hits Apply

No 2 Yes 4

14 hits Apply

NOT SPECIFIED 6

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 14

14 hits Apply

190 W 5

14 hits Apply

Surface Mount (1)

NO 14

14 hits Apply