Parametric results for: irfb9n65a under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

325.0 mJ 4

5 hits Apply

DRAIN 3

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

650 V 4

5 hits Apply

Drain Current-Max (ID) (1)

8.5 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

930 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

TO-220AB 4

5 hits Apply

R-PSFM-T3 4

5 hits Apply

e0 1 e2 1 e3 2

5 hits Apply

Manufacturer (3)

International Rectifier 2 Vishay Intertechnologies 2 Vishay Siliconix 1

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

FLANGE MOUNT 4

5 hits Apply

End Of Life 2 Transferred 3

5 hits Apply

No 1 Yes 2

5 hits Apply

260 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

167 W 3

5 hits Apply

Surface Mount (1)

NO 4

5 hits Apply