Parametric results for: irfb9n65apbf. under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

325.0 mJ 3

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

650 V 3

4 hits Apply

Drain Current-Max (ID) (1)

8.5 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

930 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

TO-220AB 3

4 hits Apply

R-PSFM-T3 3

4 hits Apply

e2 1 e3 2

4 hits Apply

Manufacturer (3)

International Rectifier 1 Vishay Intertechnologies 2 Vishay Siliconix 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLANGE MOUNT 3

4 hits Apply

End Of Life 2 Transferred 2

4 hits Apply

Yes 2

4 hits Apply

260 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

167 W 2

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply