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IRFG110
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | HIGH RELIABILITY | 75 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.4 W | 1.4 W | 4 A | SWITCHING | SILICON | 80 ns | 45 ns | MO-036AB | R-CDIP-T14 | e0 | Not Qualified | 150 °C | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | DUAL | INTERNATIONAL RECTIFIER CORP | IN-LINE, R-CDIP-T14 | 36 | compliant | EAR99 | 8541.29.00.95 | |||||
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IRFG110
TT Electronics Resistors
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Check for Price | No | Obsolete | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | TT ELECTRONICS PLC | IN-LINE, R-PDIP-T14 | compliant | EAR99 | ||||||||||||||||
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IRFG110
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | No | No | Obsolete | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | SEMELAB LTD | IN-LINE, R-PDIP-T14 | 14 | compliant | EAR99 | ||||||||||||||
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IRFG110-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | No | No | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | SEMELAB LTD | IN-LINE, R-PDIP-T14 | 14 | compliant | EAR99 | ||||||||||||||
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IRFG110
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | HIGH RELIABILITY | 75 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.4 W | 4 A | SWITCHING | SILICON | MO-036AB | R-CDIP-T14 | e0 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | DUAL | INFINEON TECHNOLOGIES AG | IN-LINE, R-CDIP-T14 | not_compliant | EAR99 | Infineon | ||||||||
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IRFG110R1
TT Electronics Resistors
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Check for Price | Yes | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | e1 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN SILVER COPPER | THROUGH-HOLE | DUAL | TT ELECTRONICS PLC | HERMETIC SEALED PACKAGE-14 | compliant | EAR99 | ||||||||||||||||
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IRFG110R1
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | e1 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN SILVER COPPER | THROUGH-HOLE | DUAL | SEMELAB LTD | IN-LINE, R-PDIP-T14 | 14 | compliant | EAR99 | ||||||||||||||
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IRFG110PBF
International Rectifier
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | HIGH RELIABILITY | 75 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.4 W | 4 A | SWITCHING | SILICON | 80 ns | 45 ns | MO-036AB | R-CDIP-T14 | Not Qualified | 150 °C | 260 | 40 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | INTERNATIONAL RECTIFIER CORP | IN-LINE, R-CDIP-T14 | 36 | compliant | EAR99 | 8541.29.00.95 | ||||||
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IRFG110-JQR-B
TT Electronics Resistors
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Check for Price | No | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | TT ELECTRONICS PLC | HERMETIC SEALED PACKAGE-14 | compliant | EAR99 | ||||||||||||||||
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IRFG110-JQR-BR1
TT Electronics Resistors
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Check for Price | Yes | Active | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 100 V | 4 | 1 A | 800 mΩ | AVALANCHE ENERGY RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDIP-T14 | e1 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN SILVER COPPER | THROUGH-HOLE | DUAL | TT ELECTRONICS PLC | HERMETIC SEALED PACKAGE-14 | compliant | EAR99 |