Parametric results for: irfp340 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

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450.0 mJ 2 480.0 mJ 8 520.0 mJ 1 553.0 mJ 2

Min (mJ) - Max (mJ)

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DRAIN 6

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Configuration (2)

SINGLE 13 SINGLE WITH BUILT-IN DIODE 8

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DS Breakdown Voltage-Min (1)

400 V 13

22 hits Apply

Drain Current-Max (ID) (2)

10 A 7 11 A 14

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

540 mΩ 2 550 mΩ 11

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 21

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TO-247 4 TO-247AC 4

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R-PSFM-T3 13

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e0 14 e3 5

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Manufacturer (12)

Fairchild Semiconductor Corporation 3 FCI Semiconductor 1 Harris Semiconductor 2 International Rectifier 2 Intersil Corporation 2 National Semiconductor Corporation 2 Rochester Electronics LLC 1 Samsung Semiconductor 2 Texas Instruments 1 Thomson Consumer Electronics 2 Vishay Intertechnologies 2 Vishay Siliconix 2

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NOT APPLICABLE 1

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Number of Elements (1)

1 21

22 hits Apply

Number of Terminals (1)

3 13

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ENHANCEMENT MODE 21

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150.0 °C 20

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PLASTIC/EPOXY 13

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RECTANGULAR 13

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FLANGE MOUNT 13

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Active 3 Contact Manufacturer 1 Obsolete 11 Transferred 7

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No 3 Yes 4

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260 1 NOT APPLICABLE 1

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Polarity/Channel Type (1)

N-CHANNEL 21

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125 W 1 150 W 3

Min (W) - Max (W)

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150 W 14 162 W 3

Min (W) - Max (W)

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Surface Mount (1)

NO 21

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