Parametric results for: irfr4104tr under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 10

14 hits Apply

145.0 mJ 9 310.0 mJ 4

Min (mJ) - Max (mJ)

14 hits Apply

DRAIN 13

14 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 13

14 hits Apply

DS Breakdown Voltage-Min (1)

40 V 13

14 hits Apply

Drain Current-Max (ID) (1)

42 A 14

14 hits Apply

Drain-source On Resistance-Max (1)

5.5 mΩ 13

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 14

14 hits Apply

TO-252AA 13

14 hits Apply

R-PSSO-G2 13

14 hits Apply

e0 3 e3 6

14 hits Apply

Manufacturer (2)

Infineon Technologies AG 5 International Rectifier 9

14 hits Apply

1 9

14 hits Apply

Number of Elements (1)

1 14

14 hits Apply

Number of Terminals (1)

2 13

14 hits Apply

ENHANCEMENT MODE 14

14 hits Apply

150.0 °C 3 175.0 °C 8

Min (°C) - Max (°C)

14 hits Apply

PLASTIC/EPOXY 13

14 hits Apply

RECTANGULAR 13

14 hits Apply

SMALL OUTLINE 13

14 hits Apply

Active 1 End Of Life 1 Obsolete 5 Transferred 7

14 hits Apply

No 1 Yes 3

14 hits Apply

260 6

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 14

14 hits Apply

140 W 11

14 hits Apply

Surface Mount (1)

YES 14

14 hits Apply