Parametric results for: irfu1n60a under Power Field-Effect Transistors

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Manufacturer Part Number: irfu1n60a
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IRFU1N60APBF
Vishay Intertechnologies
$0.7751 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC compliant EAR99 Vishay
IRFU1N60APBF
Vishay Siliconix
$0.9807 Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 5.6 A SWITCHING SILICON TO-251 R-PSIP-T3 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE VISHAY SILICONIX unknown EAR99 Vishay TO-251 ROHS COMPLIANT, IPAK-3 3
IRFU1N60A
International Rectifier
Check for Price No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-251AA R-PSIP-T3 e0 Not Qualified 1 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP compliant EAR99 TO-251AA IN-LINE, R-PSIP-T3 3
IRFU1N60A
Vishay Siliconix
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 5.6 A SWITCHING SILICON TO-251 R-PSIP-T3 Not Qualified 150 °C 240 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE VISHAY SILICONIX unknown EAR99 TO-251 IPAK-3 3
IRFU1N60A
Vishay Intertechnologies
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-251AA R-PSIP-T3 Not Qualified 1 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC unknown EAR99 TO-251AA IN-LINE, R-PSIP-T3 3
IRFU1N60APBF
International Rectifier
Check for Price Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 1 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN OVER NICKEL THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP compliant EAR99 TO-251AA LEAD FREE, IPAK-3 3