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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: irfu420pbf under Power Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		IRFU420PBF Vishay Intertechnologies
		IRFU420PBF Vishay Siliconix
		IRFU420PBF International Rectifier

				Most Relevant								Technical										Compliance				Operating Conditions					Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Additional Feature	Avalanche Energy Rating (Eas)	Feedback Cap-Max (Crss)	FET Technology	Operating Mode	Power Dissipation Ambient-Max	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	Samacsys Manufacturer	Part Package Code	Pin Count	HTS Code

Yes

Active

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

500 V

1

2.4 A

3 Ω

AVALANCHE RATED

400 mJ

37 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

8 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

e3

Not Qualified

1

150 °C

-55 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

SINGLE

VISHAY INTERTECHNOLOGY INC

IPAK-3

compliant

EAR99

Vishay

Yes

Yes

Active

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

500 V

1

2.4 A

3 Ω

AVALANCHE RATED

400 mJ

37 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

8 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

e3

Not Qualified

1

150 °C

-55 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

SINGLE

VISHAY SILICONIX

IN-LINE, R-PSIP-T3

unknown

EAR99

Vishay

TO-251

3

Check for Price

Yes

Transferred

N-CHANNEL

NO

SINGLE

3

500 V

1

2.4 A

3 Ω

400 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

42 W

8 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

e3

Not Qualified

1

150 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

LEAD FREE PACKAGE-3

compliant

EAR99

TO-251AA

3

8541.29.00.95

Compare

Vishay Intertechnologies

Yes

Active

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

500 V

1

2.4 A

3 Ω

AVALANCHE RATED

400 mJ

37 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

8 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

e3

Not Qualified

1

150 °C

-55 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

SINGLE

VISHAY INTERTECHNOLOGY INC

IPAK-3

compliant

EAR99

Vishay

Vishay Siliconix

Yes

Yes

Active

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

500 V

1

2.4 A

3 Ω

AVALANCHE RATED

400 mJ

37 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

8 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

e3

Not Qualified

1

150 °C

-55 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

SINGLE

VISHAY SILICONIX

IN-LINE, R-PSIP-T3

unknown

EAR99

Vishay

TO-251

3

International Rectifier

Check for Price

Yes

Transferred

N-CHANNEL

NO

SINGLE

3

500 V

1

2.4 A

3 Ω

400 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

42 W

8 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

e3

Not Qualified

1

150 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

LEAD FREE PACKAGE-3

compliant

EAR99

TO-251AA

3

8541.29.00.95