Parametric results for: irhlub7970z4 under Small Signal Field-Effect Transistors

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Manufacturer Part Number: irhlub7970z4
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IRHLUB7970Z4PBF
International Rectifier
Check for Price Yes Yes Transferred P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 530 mA 1.4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-XDSO-N3 Not Qualified RH - 100K Rad(Si) 175 °C 260 40 UNSPECIFIED RECTANGULAR SMALL OUTLINE NO LEAD DUAL INTERNATIONAL RECTIFIER CORP SMALL OUTLINE, R-XDSO-N3 3 compliant EAR99
IRHLUB7970Z4
Infineon Technologies AG
Check for Price No Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 530 mA 1.4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 600 mW SWITCHING SILICON R-XDSO-N3 e0 Not Qualified RH - 100K Rad(Si) 150 °C NOT SPECIFIED NOT SPECIFIED UNSPECIFIED RECTANGULAR SMALL OUTLINE Tin/Lead (Sn/Pb) NO LEAD DUAL INFINEON TECHNOLOGIES AG SMALL OUTLINE, R-XDSO-N3 not_compliant EAR99 Infineon
IRHLUB7970Z4
International Rectifier
Check for Price No No Transferred P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 530 mA 1.4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 600 mW SWITCHING SILICON R-XDSO-N3 e0 Not Qualified RH - 100K Rad(Si) 150 °C UNSPECIFIED RECTANGULAR SMALL OUTLINE TIN LEAD NO LEAD DUAL INTERNATIONAL RECTIFIER CORP SMALL OUTLINE, R-XDSO-N3 3 compliant EAR99
IRHLUB7970Z4PBF
Infineon Technologies AG
Check for Price Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 530 mA 1.4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-XDSO-N3 175 °C NOT SPECIFIED NOT SPECIFIED UNSPECIFIED RECTANGULAR SMALL OUTLINE NO LEAD DUAL INFINEON TECHNOLOGIES AG HERMETIC SELALED, UB-4 compliant EAR99 Infineon