Parametric results for: irhm7c50se under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 2 HIGH RELIABILITY, RADIATION HARDENED 6

11 hits Apply

500.0 mJ 8

11 hits Apply

ISOLATED 8

11 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 8

11 hits Apply

DS Breakdown Voltage-Min (1)

600 V 11

11 hits Apply

Drain Current-Max (ID) (1)

10.4 A 11

11 hits Apply

Drain-source On Resistance-Max (2)

600 mΩ 3 650 mΩ 8

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-254AA 5

11 hits Apply

S-MSFM-P3 9 S-XSFM-P3 2

11 hits Apply

e0 4

11 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 International Rectifier 7

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

3 11

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 10

11 hits Apply

METAL 9 UNSPECIFIED 2

11 hits Apply

SQUARE 11

11 hits Apply

FLANGE MOUNT 11

11 hits Apply

Active 3 Obsolete 6 Transferred 2

11 hits Apply

No 3 Yes 4

11 hits Apply

260 4 NOT SPECIFIED 3

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

250 W 1

11 hits Apply

150 W 1

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply