Filter Your Search
1 - 3 of 3 results
|
IRHMB57Z60PBF
Infineon Technologies AG
|
Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 45 A | 4.5 mΩ | 1250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 180 A | SWITCHING | SILICON | R-XSIP-T3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | IN-LINE, R-XSIP-T3 | compliant | EAR99 | |||||||||
|
IRHMB57Z60PBF
International Rectifier
|
Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 45 A | 4.5 mΩ | 1250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 180 A | SWITCHING | SILICON | R-XSIP-T3 | Not Qualified | 150 °C | 260 | 40 | ISOLATED | UNSPECIFIED | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | IN-LINE, R-XSIP-T3 | compliant | EAR99 | TO-254AA | 3 | |||||
|
IRHMB57Z60
Infineon Technologies AG
|
Check for Price | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 45 A | 4.5 mΩ | 1250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 208 W | 180 A | SWITCHING | SILICON | R-XSIP-T3 | e0 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, TABLESS TO-254AA, 3 PIN | not_compliant | EAR99 |