Parametric results for: irlz24nstrl under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY 2

5 hits Apply

68.0 mJ 2

5 hits Apply

DRAIN 2

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

55 V 2

5 hits Apply

Drain Current-Max (ID) (1)

18 A 2

5 hits Apply

Drain-source On Resistance-Max (1)

75 mΩ 2

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

5 hits Apply

TO-263AB 2

5 hits Apply

R-PSSO-G2 2

5 hits Apply

e3 2

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 3 International Rectifier 2

5 hits Apply

1 2

5 hits Apply

Number of Elements (1)

1 2

5 hits Apply

Number of Terminals (1)

2 2

5 hits Apply

ENHANCEMENT MODE 2

5 hits Apply

175.0 °C 1

5 hits Apply

PLASTIC/EPOXY 2

5 hits Apply

RECTANGULAR 2

5 hits Apply

SMALL OUTLINE 2

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Yes 1

5 hits Apply

260 2 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

5 hits Apply

45 W 1

5 hits Apply

Surface Mount (1)

YES 2

5 hits Apply