Parametric results for: irlz34n under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 ESD PROTECTED, LOGIC LEVEL COMPATIBLE 2 LOGIC LEVEL COMPATIBLE 73 LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY 5 LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED 6

90 hits Apply

45.0 mJ 2 110.0 mJ 15

Min (mJ) - Max (mJ)

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DRAIN 88

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Configuration (2)

SINGLE 74 SINGLE WITH BUILT-IN DIODE 15

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DS Breakdown Voltage-Min (1)

55 V 88

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Drain Current-Max (ID) (2)

27 A 74 30 A 15

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

35 mΩ 73 46 mΩ 15

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 89

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94 pF 1

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TO-220AB 77 TO-262AA 2 TO-263AB 8

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R-PSFM-T3 77 R-PSIP-T3 2 R-PSSO-G2 9

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e0 22 e3 66

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Manufacturer (4)

Infineon Technologies AG 42 International Rectifier 45 NXP Semiconductors 2 Philips Semiconductors 1

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1 8

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Number of Elements (1)

1 89

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Number of Terminals (2)

2 9 3 79

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ENHANCEMENT MODE 89

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175.0 °C 13

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-55.0 °C 1

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PLASTIC/EPOXY 88

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RECTANGULAR 88

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FLANGE MOUNT 77 IN-LINE 2 SMALL OUTLINE 9

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Active 5 Obsolete 61 Transferred 24

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No 17 Yes 22

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225 2 260 5 NOT SPECIFIED 4

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Polarity/Channel Type (1)

N-CHANNEL 89

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56 W 35

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56 W 2 68 W 7

Min (W) - Max (W)

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Surface Mount (2)

NO 80 YES 9

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