Parametric results for: ixfh7n90 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

4 hits Apply

700.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

900 V 2

4 hits Apply

Drain Current-Max (ID) (1)

7 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

1.5 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-247AD 2

4 hits Apply

R-PSFM-T3 2

4 hits Apply

e0 2 e3 2

4 hits Apply

Manufacturer (2)

IXYS Corporation 2 Littelfuse Inc 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Active 1 Obsolete 1 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

150 W 2 180 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply