Parametric results for: ixfn44n50 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 6

8 hits Apply

2500.0 mJ 2

8 hits Apply

DRAIN 2 ISOLATED 6

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

500 V 8

8 hits Apply

Drain Current-Max (ID) (1)

44 A 8

8 hits Apply

Drain-source On Resistance-Max (2)

120 mΩ 6 120 Ω 2

Min (Ω) - Max (Ω)

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

R-PUFM-X4 6 R-XUFM-X4 2

8 hits Apply

e3 2

8 hits Apply

Manufacturer (2)

IXYS Corporation 6 Littelfuse Inc 2

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

4 8

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 8

8 hits Apply

PLASTIC/EPOXY 6 UNSPECIFIED 2

8 hits Apply

RECTANGULAR 8

8 hits Apply

FLANGE MOUNT 8

8 hits Apply

Not Recommended 1 Obsolete 5 Transferred 2

8 hits Apply

Yes 6

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

520 W 2

8 hits Apply

500 W 2 520 W 4

Min (W) - Max (W)

8 hits Apply

Surface Mount (1)

NO 8

8 hits Apply