Parametric results for: ixfp12n65x2 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3

6 hits Apply

300.0 mJ 3

6 hits Apply

DRAIN 2 ISOLATED 1

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

650 V 3

6 hits Apply

Drain Current-Max (ID) (1)

12 A 3

6 hits Apply

Drain-source On Resistance-Max (1)

310 mΩ 3

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

6 hits Apply

1 pF 3

6 hits Apply

TO-220AB 3

6 hits Apply

R-PSFM-T3 3

6 hits Apply

e3 2

6 hits Apply

Manufacturer (2)

IXYS Corporation 3 Littelfuse Inc 3

6 hits Apply

1 2

6 hits Apply

Number of Elements (1)

1 3

6 hits Apply

Number of Terminals (1)

3 3

6 hits Apply

ENHANCEMENT MODE 3

6 hits Apply

150.0 °C 3

6 hits Apply

-55.0 °C 3

6 hits Apply

PLASTIC/EPOXY 3

6 hits Apply

RECTANGULAR 3

6 hits Apply

FLANGE MOUNT 3

6 hits Apply

Active 2 Obsolete 1 Transferred 3

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

6 hits Apply

40 W 1 180 W 2

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

NO 3

6 hits Apply