Parametric results for: ixta230n075t2 under Power Field-Effect Transistors

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Manufacturer Part Number: ixta230n075t2
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IXTA230N075T2
IXYS Corporation
$3.5577 Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 75 V 1 230 A 4.2 mΩ AVALANCHE RATED 850 mJ 125 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 480 W 700 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE IXYS CORP D2PAK TO-263, 3 PIN 4 not_compliant EAR99
IXTA230N075T2-7
IXYS Corporation
$4.0673 Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 75 V 1 230 A 4.2 mΩ AVALANCHE RATED 850 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 480 W 700 A SWITCHING SILICON TO-263 R-PSSO-G6 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE IXYS CORP D2PAK PLASTIC, TO-263, 7 PIN 4 not_compliant EAR99
IXTA230N075T2-7
Littelfuse Inc
$5.0989 Yes Active e3 1 260 10 Matte Tin (Sn) LITTELFUSE INC , not_compliant EAR99 LITTELFUSE
IXTA230N075T2-TRL
Littelfuse Inc
$5.2300 Yes Active e3 1 260 10 MATTE TIN LITTELFUSE INC compliant EAR99 LITTELFUSE
IXTA230N075T2
Littelfuse Inc
$5.2764 Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 75 V 1 230 A 4.2 mΩ AVALANCHE RATED 850 mJ 125 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 480 W 700 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 1 175 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE LITTELFUSE INC , unknown EAR99 LITTELFUSE
IXTA230N075T2-TRL
IXYS Corporation
Check for Price Yes Transferred e3 1 260 10 MATTE TIN IXYS CORP compliant EAR99