Parametric results for: jan2n6790u under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILTY 1

3 hits Apply

SOURCE 1

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

200 V 1

3 hits Apply

Drain Current-Max (ID) (2)

2.8 A 1 3.5 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

850 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-CQCC-N15 1

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Defense Logistics Agency 1 International Rectifier 1 Microsemi Corporation 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

15 1

3 hits Apply

ENHANCEMENT MODE 1

3 hits Apply

150.0 °C 2

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

CHIP CARRIER 1

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

20 W 2

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply