Parametric results for: jan2n6849u under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology JESD-609 Code Manufacturer Number of Elements Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 1

3 hits Apply

Drain Current-Max (ID) (1)

6.5 A 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Defense Logistics Agency 1 International Rectifier 1 Microsemi Corporation 1

3 hits Apply

Number of Elements (1)

1 1

3 hits Apply

150.0 °C 1

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 1

3 hits Apply

25 W 1

3 hits Apply

Surface Mount (1)

YES 1

3 hits Apply