Parametric results for: jan2n7227 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 1

5 hits Apply

700.0 mJ 3

5 hits Apply

DRAIN 1 ISOLATED 3

5 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

400 V 4

5 hits Apply

Drain Current-Max (ID) (1)

14 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

415 mΩ 2

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

TO-254AA 3 TO-276AB 2

5 hits Apply

R-XBCC-N3 1 S-CBCC-N3 1 S-CSFM-P3 1 S-XSFM-P3 2

5 hits Apply

Manufacturer (3)

Advanced Power Technology 1 Defense Logistics Agency 2 Microsemi Corporation 2

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 2

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 UNSPECIFIED 3

5 hits Apply

RECTANGULAR 1 SQUARE 4

5 hits Apply

CHIP CARRIER 2 FLANGE MOUNT 3

5 hits Apply

Active 2 Obsolete 3

5 hits Apply

No 1

5 hits Apply

NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

150 W 2

5 hits Apply

Surface Mount (2)

NO 3 YES 2

5 hits Apply