Parametric results for: jantxv2n6766t1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

500.0 mJ 1

2 hits Apply

ISOLATED 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

200 V 2

2 hits Apply

Drain Current-Max (ID) (1)

30 A 2

2 hits Apply

Drain-source On Resistance-Max (2)

65 mΩ 1 85 mΩ 1

Min (Ω) - Max (Ω)

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-254AA 2

2 hits Apply

S-XSFM-P3 2

2 hits Apply

e0 1

2 hits Apply

Manufacturer (2)

Defense Logistics Agency 1 Microsemi Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

-55.0 °C 1

2 hits Apply

UNSPECIFIED 2

2 hits Apply

SQUARE 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

No 1

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

150 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply