Parametric results for: jantxv2n6800 under Small Signal Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3 HIGH RELIABILITY 3 RADIATION HARDENED 3

11 hits Apply

0.51 mJ 6

11 hits Apply

DRAIN 6 SOURCE 3

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

11 hits Apply

DS Breakdown Voltage-Min (1)

400 V 11

11 hits Apply

Drain Current-Max (ID) (1)

3 A 11

11 hits Apply

Drain-source On Resistance-Max (3)

1 Ω 4 1.1 Ω 4 1.15 Ω 3

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

80 pF 2

11 hits Apply

TO-205 1 TO-205AF 7

11 hits Apply

O-MBCY-W3 8 R-CQCC-N15 3

11 hits Apply

e0 5

11 hits Apply

Manufacturer (8)

Defense Logistics Agency 2 Harris Semiconductor 1 Infineon Technologies AG 2 Intersil Corporation 1 Microsemi Corporation 2 Omnirel Corp 1 Semicoa Semiconductors 1 Unitrode Corporation 1

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (2)

15 3 3 8

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 7

11 hits Apply

CERAMIC, METAL-SEALED COFIRED 3 METAL 8

11 hits Apply

RECTANGULAR 3 ROUND 8

11 hits Apply

CHIP CARRIER 3 CYLINDRICAL 8

11 hits Apply

Active 4 Contact Manufacturer 1 Obsolete 6

11 hits Apply

NOT SPECIFIED 4

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

25 W 2

11 hits Apply

25 W 5

11 hits Apply

Surface Mount (2)

NO 8 YES 3

11 hits Apply