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Memory IC Type: LPDDR2 DRAM
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AS4C8M32MD2A-25BPCN
 Alliance Memory Inc 		$3.3275 Yes Active 268.4355 Mbit 32 8MX32 1.8 V FOUR BANK PAGE BURST LPDDR2 DRAM AUTO/SELF REFRESH; IT ALSO REQUIRES 1.2V NOM 1 1 8000000 8.3886 M SYNCHRONOUS YES 1.95 V 1.7 V CMOS OTHER S-PBGA-B168 85 °C -25 °C NOT SPECIFIED NOT SPECIFIED 168 PLASTIC/EPOXY VFBGA SQUARE GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 500 µm BOTTOM 900 µm 12 mm 12 mm ALLIANCE MEMORY INC POPFBGA-168 unknown EAR99 8542.32.00.24 Alliance Memory
EDB4432BBPA-1D-F-D
 Micron Technology Inc 		$6.9818 Yes Obsolete 4.295 Gbit 32 128MX32 1.2 V SINGLE BANK PAGE BURST LPDDR2 DRAM AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY 1 1 128000000 134.2177 M SYNCHRONOUS YES 1.3 V 1.14 V CMOS S-PBGA-B168 e1 168 PLASTIC/EPOXY VFBGA SQUARE GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 500 µm BOTTOM 800 µm 12 mm 12 mm MICRON TECHNOLOGY INC VFBGA, compliant EAR99 8542.32.00.36 Micron
IS43LD16640D-18BLI
 Integrated Silicon Solution Inc 		$7.1524 Active 1.0737 Gbit 16 64MX16 1.2 V 10 ns 533 MHz 8192 MULTI BANK PAGE BURST LPDDR2 DRAM SELF REFRESH, IT ALSO REQUIRES 1.2V NOMINAL SUPPLY COMMON 4,8,16 1 1 64000000 67.1089 M SYNCHRONOUS YES 4,8,16 1.5 mA 220 µA 1.3 V 1.14 V CMOS R-PBGA-B134 85 °C -40 °C 134 PLASTIC/EPOXY VFBGA BGA134,10X17,25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 650 µm BOTTOM 1 mm 11.5 mm 10 mm INTEGRATED SILICON SOLUTION INC FBGA-134 compliant EAR99 8542.32.00.32
EDB1332BDBH-1DAAT-F-R
 Micron Technology Inc 		$7.8650 Yes Obsolete 1.0737 Gbit 32 32MX32 1.2 V MULTI BANK PAGE BURST LPDDR2 DRAM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.3 V 1.14 V CMOS R-PBGA-B134 e1 134 PLASTIC/EPOXY VFBGA RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 650 µm BOTTOM 1 mm 11.5 mm 10 mm MICRON TECHNOLOGY INC VFBGA, compliant EAR99 8542.32.00.32 Micron 2016-05-12
EDB2432B4MA-1DIT-F-D
 Micron Technology Inc 		$8.1100 Yes Obsolete 2.1475 Gbit 32 64MX32 1.2 V SINGLE BANK PAGE BURST LPDDR2 DRAM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM 1 1 64000000 67.1089 M SYNCHRONOUS YES 1.3 V 1.14 V CMOS INDUSTRIAL R-PBGA-B134 e1 85 °C -40 °C 260 30 134 PLASTIC/EPOXY VFBGA RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 650 µm BOTTOM 1 mm 11.5 mm 10 mm MICRON TECHNOLOGY INC VFBGA, compliant EAR99 8542.32.00.36
IS43LD16320A-25BLI
 Integrated Silicon Solution Inc 		$8.1241 Yes Active 536.8709 Mbit 16 32MX16 1.2 V FOUR BANK PAGE BURST LPDDR2 DRAM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.3 V 1.14 V CMOS INDUSTRIAL R-PBGA-B134 e1 3 85 °C -40 °C 260 10 134 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 650 µm BOTTOM 1.1 mm 11.5 mm 10 mm INTEGRATED SILICON SOLUTION INC TFBGA, compliant EAR99 8542.32.00.28 Integrated Silicon Solution Inc.
IS43LD32160A-25BLI
 Integrated Silicon Solution Inc 		$8.3450 Yes Active 536.8709 Mbit 32 16MX32 1.2 V FOUR BANK PAGE BURST LPDDR2 DRAM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM 1 1 16000000 16.7772 M SYNCHRONOUS YES 1.3 V 1.14 V CMOS INDUSTRIAL R-PBGA-B134 e1 85 °C -40 °C 260 10 134 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 650 µm BOTTOM 1.1 mm 11.5 mm 10 mm INTEGRATED SILICON SOLUTION INC TFBGA, compliant EAR99 8542.32.00.28 Integrated Silicon Solution Inc.
IS43LD32320D-18BLI
 Integrated Silicon Solution Inc 		$8.4922 Active 1.0737 Gbit 32 32MX32 1.2 V 10 ns 533 MHz 8192 MULTI BANK PAGE BURST LPDDR2 DRAM SELF REFRESH, IT ALSO REQUIRES 1.2V NOMINAL SUPPLY COMMON 4,8,16 1 1 32000000 33.5544 M SYNCHRONOUS YES 4,8,16 1.5 mA 220 µA 1.3 V 1.14 V CMOS R-PBGA-B134 85 °C 134 PLASTIC/EPOXY VFBGA BGA134,10X17,25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 650 µm BOTTOM 1 mm 11.5 mm 10 mm INTEGRATED SILICON SOLUTION INC compliant
IS43LD16128C-25BLI
 Integrated Silicon Solution Inc 		$8.6739 Active 2.1475 Gbit 16 128MX16 1.2 V 400 MHz MULTI BANK PAGE BURST LPDDR2 DRAM also operates with 1.8v nom supply COMMON 4,8,16 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8,16 10 mA 160 µA 1.3 V 1.14 V CMOS R-PBGA-B134 85 °C -40 °C 260 134 PLASTIC/EPOXY TFBGA BGA134,10X17,25 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 650 µm BOTTOM 1.1 mm 11.5 mm 10 mm INTEGRATED SILICON SOLUTION INC , unknown EAR99 8542.32.00.36 2020-03-26
IS43LD16128C-18BLI
 Integrated Silicon Solution Inc 		$9.1174 Active 2.1475 Gbit 16 128MX16 1.2 V 533 MHz MULTI BANK PAGE BURST LPDDR2 DRAM also operates with 1.8v nom supply COMMON 4,8,16 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8,16 10 mA 210 µA 1.3 V 1.14 V CMOS R-PBGA-B134 85 °C -40 °C 260 134 PLASTIC/EPOXY TFBGA BGA134,10X17,25 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 650 µm BOTTOM 1.1 mm 11.5 mm 10 mm INTEGRATED SILICON SOLUTION INC , unknown EAR99 8542.32.00.36 Integrated Silicon Solution Inc. 2020-03-26
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