Parametric results for: mjd112-001g under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 1

1 hit Apply

Collector Current-Max (IC) (1)

2 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

100 V 1

1 hit Apply

Configuration (1)

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 1

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DC Current Gain-Min (hFE) (1)

200.0 1

1 hit Apply

R-PSIP-T3 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

onsemi 1

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Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

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RECTANGULAR 1

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IN-LINE 1

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Obsolete 1

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Yes 1

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Polarity/Channel Type (1)

NPN 1

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Surface Mount (1)

NO 1

1 hit Apply

Transition Frequency-Nom (fT) (1)

25 MHz 1

1 hit Apply