Parametric results for: mld2n06clt4 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE, ESD PROTECTED 2 LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION 2

4 hits Apply

80.0 mJ 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR 4

4 hits Apply

DS Breakdown Voltage-Min (1)

58 V 4

4 hits Apply

Drain Current-Max (ID) (1)

2 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

400 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSSO-G2 4

4 hits Apply

e0 1 e3 1

4 hits Apply

Manufacturer (3)

Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 2

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Obsolete 2 Transferred 2

4 hits Apply

No 1 Yes 1

4 hits Apply

235 1 260 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

40 W 2

4 hits Apply

40 W 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply