Parametric results for: msc090 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Output Current-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FREE WHEELING DIODE; LOW LEAKAGE CURRENT; SNUBBER DIODE 1

5 hits Apply

CATHODE 1 DRAIN 4

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Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

700 V 4

5 hits Apply

Drain Current-Max (ID) (2)

25 A 2 28 A 2

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (2)

18 mΩ 2 115 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

5 pF 1

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TO-247 2 TO-268 1 TO-268AA 1

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R-PSFM-T2 1 R-PSFM-T3 2 R-PSSO-G2 2

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Manufacturer (2)

Microchip Technology Inc 3 Microsemi Corporation 2

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Number of Elements (1)

1 5

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Number of Terminals (2)

2 3 3 2

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ENHANCEMENT MODE 4

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175.0 °C 5

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-55.0 °C 5

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184 A 1

5 hits Apply

PLASTIC/EPOXY 5

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RECTANGULAR 5

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FLANGE MOUNT 3 SMALL OUTLINE 2

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Active 3 Transferred 2

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Polarity/Channel Type (1)

N-CHANNEL 4

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90 W 2 91 W 2

Min (W) - Max (W)

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Surface Mount (2)

NO 3 YES 2

5 hits Apply