Parametric results for: mscsm120tam11ctpag under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 2

2 hits Apply

Configuration (1)

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR 2

2 hits Apply

DS Breakdown Voltage-Min (1)

1.2 kV 2

2 hits Apply

Drain Current-Max (ID) (1)

251 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

10.4 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-XUFM-X26 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

2 hits Apply

Number of Elements (1)

6 2

2 hits Apply

Number of Terminals (1)

26 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

175.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

1.042 kW 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply