Parametric results for: mtb75n05hdt4 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

5 hits Apply

500.0 mJ 1

5 hits Apply

DRAIN 3

5 hits Apply

Configuration (3)

SINGLE 3 Single 1 SINGLE WITH BUILT-IN DIODE 1

5 hits Apply

DS Breakdown Voltage-Min (1)

50 V 3

5 hits Apply

Drain Current-Max (Abs) (ID) (1)

75 A 1

5 hits Apply

Drain Current-Max (ID) (1)

75 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

9.5 mΩ 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PSSO-G2 3

5 hits Apply

e0 3

5 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 2

5 hits Apply

1 2

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

2 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

235 1 260 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

125 W 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply