Parametric results for: mtd3055vl1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

4 hits Apply

72.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

4 hits Apply

Drain Current-Max (ID) (1)

12 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

180 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSIP-T3 1 R-PSSO-G2 1

4 hits Apply

e0 4

4 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 Motorola Semiconductor Products 1 onsemi 2

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

2 1 3 1

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 3

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

IN-LINE 1 SMALL OUTLINE 1

4 hits Apply

Obsolete 4

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

48 W 3

4 hits Apply

Surface Mount (2)

NO 1 YES 3

4 hits Apply