Parametric results for: mtw32n20e under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4

5 hits Apply

810.0 mJ 4

5 hits Apply

DRAIN 4

5 hits Apply

Configuration (3)

SINGLE 2 Single 1 SINGLE WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

200 V 4

5 hits Apply

Drain Current-Max (Abs) (ID) (1)

32 A 1

5 hits Apply

Drain Current-Max (ID) (1)

32 A 4

5 hits Apply

Drain-source On Resistance-Max (2)

75 mΩ 2 85 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-247AE 4

5 hits Apply

R-PSFM-T3 4

5 hits Apply

e0 3 e3 1

5 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 2

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

-55.0 °C 1

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

FLANGE MOUNT 4

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

No 1 Yes 1

5 hits Apply

235 1 260 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

180 W 5

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply