Parametric results for: ne3512s02-t1d-a under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 3

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

3 V 4

4 hits Apply

Drain Current-Max (ID) (1)

15 mA 4

4 hits Apply

HETERO-JUNCTION 4

4 hits Apply

Highest Frequency Band (1)

KU BAND 4

4 hits Apply

R-PQMW-F4 2 R-PXMW-F4 2

4 hits Apply

e6 2

4 hits Apply

Manufacturer (4)

California Eastern Laboratories (CEL) 1 NEC Compound Semiconductor Devices Ltd 1 NEC Electronics Group 1 Renesas Electronics Corporation 1

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

DEPLETION MODE 4

4 hits Apply

125.0 °C 1

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

MICROWAVE 4

4 hits Apply

Obsolete 2 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

165 mW 1

4 hits Apply

Power Gain-Min (Gp) (1)

12.5 dB 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply